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STF13N65M2

  • STF13N65M2
  • STF13N65M2
STF13N65M2
Mosfets
STMicroelectronics
N-Channel 650 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:650V
Drain-Source On Resistance-Max:0.43Ω
Rated Power Dissipation:25W
Qg Gate Charge:17nC
Gate-Source Voltage-Max [Vgss]:25V
Drain Current:10A
Turn-on Delay Time:11ns
Turn-off Delay Time:38ns
Rise Time:7.8ns
Fall Time:12ns
Gate Source Threshold:3V
Technology:MDmesh
Input Capacitance:590pF
Package Style: TO-220FP (TO-220FPAB)
Mounting Method:Through Hole
PDF(1)

1

19.2623

19.2623

40

17.256

690.24

150

16.5366

2480.49

400

15.959

6383.6

1500

15.3816

23072.4

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