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STF13NM60N

  • STF13NM60N
  • STF13NM60N
STF13NM60N
Mosfets
STMicroelectronics
Single N-Channe
-
Box
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:0.36Ω
Rated Power Dissipation:90W
Qg Gate Charge:27nC
Gate-Source Voltage-Max [Vgss]:25V
Drain Current:11A
Turn-on Delay Time:3ns
Turn-off Delay Time:30ns
Rise Time:8ns
Fall Time:10ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:4V
Technology:Si
Height - Max:16.4mm
Length:10.4mm
Input Capacitance:790pF
Package Style: TO-220FP (TO-220FPAB)
Mounting Method:Through Hole
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