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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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STL90N3LLH6
STL90N3LLH6
:
STL90N3LLH6
:
Mosfets
:
STMicroelectronics
:
N-Channel 30 V
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
30V
Drain-Source On Resistance-Max:
0.0045Ω
Rated Power Dissipation:
60|W
Qg Gate Charge:
17nC
Mounting Method:
Surface Mount
PDF(1)
3000
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40749
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