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STP10NM60N

  • STP10NM60N
  • STP10NM60N
STP10NM60N
Mosfets
STMicroelectronics
N-Channel 650 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:0.55Ω
Rated Power Dissipation:70W
Qg Gate Charge:19nC
Gate-Source Voltage-Max [Vgss]:25V
Drain Current:10A
Turn-on Delay Time:10ns
Turn-off Delay Time:32ns
Rise Time:12ns
Fall Time:15ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:3V
Technology:MDmesh
Input Capacitance:540pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
PDF(1)

50

29.7987

1489.935

150

25.6414

3846.21

500

24.7817

12390.85

1000

24.2151

24215.1

2000

23.7803

47560.6

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