TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 950V |
Drain-Source On Resistance-Max: | 2.5Ω |
Rated Power Dissipation: | 70W |
Qg Gate Charge: | 12.5nC |
Gate-Source Voltage-Max [Vgss]: | 30V |
Drain Current: | 3.5A |
Turn-on Delay Time: | 12ns |
Turn-off Delay Time: | 32ns |
Rise Time: | 16ns |
Fall Time: | 25ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 5V |
Technology: | Si |
Height - Max: | 9.52mm |
Length: | 10.4mm |
Input Capacitance: | 220pF |
Package Style: | TO-220-3 (TO-220AB) |
Mounting Method: | Through Hole |
50
19.9818
999.09
200
17.1041
3420.82
750
16.5366
12402.45
1250
16.2428
20303.5
2500
15.959
39897.5