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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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SUD50P10-43L-E3
SUD50P10-43L-E3
:
SUD50P10-43L-E3
:
Mosfets
:
Vishay
:
Single P-Channe
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
P-Ch
Drain-to-Source Voltage [Vdss]:
100V
Drain-Source On Resistance-Max:
0.043Ω
Rated Power Dissipation:
136|W
Qg Gate Charge:
54nC
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount
PDF(1)
2000
20.985
41970
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