ZXMN10A11GTA Mosfets_Inventory of electronic components_Electronic equipment_Power management

ZXMN10A11GTA


：	ZXMN10A11GTA
：	Mosfets
：	Diodes Incorporated
：	ZXMN10A11G Seri
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	0.35Ω
Rated Power Dissipation:	2\|3.9W
Qg Gate Charge:	5.4nC
Package Style:	SOT-223 (TO-261-4, SC-73)
Mounting Method:	Surface Mount

PDF(1)

1000

5.6794

5679.4

2000

5.3956

10791.2

4000

5.1778

20711.2

5000

4.8841

24420.5

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ZXMN10A11GTA

ZXMN10A11G Series 100 V 0.35 Ohm N-Channel Enhancement Mode MOSFET -SOT-223

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