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RAM(随机存取存储器)
/
存储器
/
DRAM(动态RAM)
/
AS4C2M32S-6BIN
AS4C2M32S-6BIN
:
AS4C2M32S-6BIN
:
DRAM (Dynamic RAM)
:
Alliance Memory
:
AS4C2M32S Serie
:
-
:
Tray
:
-
TYPE
DESCRIPTION
Memory Density:
64Mb
Configuration:
2 M x 32
Supply Voltage-Nom:
3V to 3.6V
Speed Grade:
166MHz
Package Style:
FBGA-90
Mounting Method:
Surface Mount
PDF(1)
190
62.9753
11965.307
Hirose Electric
FH34SRJ-24S-0.5SH(50)
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Décor Class A Vero SE 29 LES CoB Array 3500K 93 CRI typ 15263 lm 69.4 V 3 SDCM
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AS4C2M32S Series 64 Mb (2 M x 32) 3.6 V Synchronous DRAM (SDRAM) - -TFBGA-90
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RXW Series 330 uF 100 V Radial Aluminum Electrolytic Capacitor
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NFC/RFID Tag w/ 4-Kbit EEPROM /Energy harvesting/I²C Bus/ISO 15693 RF Interface
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