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| TYPE | DESCRIPTION |
| Manufacturer: | ROHM Semiconductor |
| Product Category: | Discrete Semiconductor Modules |
| RoHS: | Details |
| Product: | Power Semiconductor Modules |
| Type: | SiC Power MOSFET |
| Vgs - Gate-Source Voltage: | - 4 V, 22 V |
| Mounting Style: | Screw Mount |
| Package / Case: | Module |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 150 C |
| Series: | BSMx |
| Packaging: | Tray |
| Brand: | ROHM Semiconductor |
| Configuration: | Half-Bridge |
| Fall Time: | 50 ns |
| Id - Continuous Drain Current: | 180 A |
| Number of Channels: | 2 Channel |
| Pd - Power Dissipation: | 880 W |
| Product Type: | Discrete Semiconductor Modules |
| Rise Time: | 70 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 12 |
| Subcategory: | Discrete Semiconductor Modules |
| Technology: | SiC |
| Transistor Polarity: | N-Channel |
| Typical Delay Time: | 50 ns |
| Typical Turn-Off Delay Time: | 165 ns |
| Typical Turn-On Delay Time: | 50 ns |
| Vds - Drain-Source Breakdown Voltage: | 1200 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.7 V |
| Unit Weight: | 10.658768 oz |
1
1105.62
1105.62
5
1051.42
5257.1
