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| TYPE | DESCRIPTION |
| Manufacturer: | Infineon |
| Product Category: | Discrete Semiconductor Modules |
| RoHS: | Details |
| Product: | Power MOSFET Modules |
| Type: | SiC Power Module |
| Vf - Forward Voltage: | 4.6 V |
| Vgs - Gate-Source Voltage: | - 10 V, 20 V |
| Mounting Style: | Screw Mount |
| Package / Case: | Module |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 150 C |
| Series: | CoolSiC Module |
| Packaging: | Tray |
| Brand: | Infineon Technologies |
| Configuration: | Half-Bridge |
| Fall Time: | 53 ns |
| Id - Continuous Drain Current: | 500 A |
| Operating Supply Voltage: | - |
| Product Type: | Discrete Semiconductor Modules |
| Rds On - Drain-Source Resistance: | 2.13 mOhms |
| Rise Time: | 82.2 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Subcategory: | Discrete Semiconductor Modules |
| Technology: | Si |
| Tradename: | CoolSiC |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 22 ns |
| Typical Turn-On Delay Time: | 83.4 ns |
| Vds - Drain-Source Breakdown Voltage: | 1200 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.45 V |
| Part # Aliases: | FF2MR12KM1 SP002851510 |
| Unit Weight: | 12.569788 oz |
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1758.54
1758.54
