TYPE | DESCRIPTION |
Manufacturer: | IXYS |
Product Category: | Discrete Semiconductor Modules |
RoHS: | Details |
Type: | GigaMOS Power MOSFET |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Mounting Style: | Chassis Mount |
Package / Case: | SOT-227-4 |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Series: | IXFN160N30 |
Packaging: | Tube |
Brand: | IXYS |
Configuration: | Single |
Fall Time: | 25 ns |
Height: | 12.22 mm |
Id - Continuous Drain Current: | 130 A |
Length: | 38.23 mm |
Number of Channels: | 1 Channel |
Pd - Power Dissipation: | 900 W |
Product Type: | Discrete Semiconductor Modules |
Rds On - Drain-Source Resistance: | 19 mOhms |
Rise Time: | 38 ns |
Factory Pack Quantity: Factory Pack Quantity: | 10 |
Subcategory: | Discrete Semiconductor Modules |
Technology: | Si |
Tradename: | HiPerFET |
Transistor Polarity: | N-Channel |
Typical Turn-Off Delay Time: | 105 ns |
Typical Turn-On Delay Time: | 37 ns |
Vds - Drain-Source Breakdown Voltage: | 300 V |
Vgs th - Gate-Source Threshold Voltage: | 5 V |
Width: | 25.42 mm |
Unit Weight: | 1.058219 oz |
1
56.32
56.32
10
51.92
519.2
30
49.58
1487.4
100
44.34
4434