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| TYPE | DESCRIPTION |
| Manufacturer: | IXYS |
| Product Category: | Discrete Semiconductor Modules |
| RoHS: | Details |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Mounting Style: | Chassis Mount |
| Package / Case: | SOT-227-4 |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Series: | HiPerFET |
| Packaging: | Tube |
| Brand: | IXYS |
| Configuration: | Single |
| Fall Time: | 21 ns |
| Height: | 9.6 mm |
| Id - Continuous Drain Current: | 24 A |
| Length: | 38.23 mm |
| Number of Channels: | 1 Channel |
| Pd - Power Dissipation: | 568 W |
| Product Type: | Discrete Semiconductor Modules |
| Rds On - Drain-Source Resistance: | 390 mOhms |
| Rise Time: | 35 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Subcategory: | Discrete Semiconductor Modules |
| Technology: | Si |
| Tradename: | HyperFET |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 75 ns |
| Typical Turn-On Delay Time: | 35 ns |
| Vds - Drain-Source Breakdown Voltage: | 1 kV |
| Width: | 25.42 mm |
| Unit Weight: | 1.058219 oz |
1
88.12
88.12
10
81.46
814.6
30
77.66
2329.8
100
77.28
7728
250
75.48
18870
500
market price
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