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| TYPE | DESCRIPTION |
| Manufacturer: | Microchip |
| Product Category: | Discrete Semiconductor Modules |
| RoHS: | Details |
| Product: | Power MOSFET Modules |
| Type: | Phase Leg SiC |
| Vf - Forward Voltage: | 1.5 V |
| Vr - Reverse Voltage: | 1200 V |
| Vgs - Gate-Source Voltage: | - 10 V, 25 V |
| Mounting Style: | SMD/SMT |
| Package / Case: | SP6 |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 125 C |
| Brand: | Microchip / Microsemi |
| Configuration: | Dual |
| Fall Time: | 67 ns |
| Id - Continuous Drain Current: | 495 A |
| Pd - Power Dissipation: | 2.031 kW |
| Product Type: | Discrete Semiconductor Modules |
| Rds On - Drain-Source Resistance: | 5.2 mOhms |
| Rise Time: | 55 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Subcategory: | Discrete Semiconductor Modules |
| Technology: | SiC |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 166 ns |
| Typical Turn-On Delay Time: | 56 ns |
| Vds - Drain-Source Breakdown Voltage: | 1200 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.8 V |
1
1885.34
1885.34
10
1885.32
18853.2
100
market price
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