TYPE | DESCRIPTION |
Manufacturer: | Mitsubishi Electric |
Product Category: | IGBT Modules |
RoHS: | Details |
Product: | IGBT Silicon Modules |
Configuration: | Dual |
Collector- Emitter Voltage VCEO Max: | 1200 V |
Collector-Emitter Saturation Voltage: | 1.7 V |
Continuous Collector Current at 25 C: | 450 A |
Gate-Emitter Leakage Current: | 0.5 uA |
Pd - Power Dissipation: | 4835 W |
Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 150 C |
Brand: | Mitsubishi Electric |
Maximum Gate Emitter Voltage: | 20 V |
Mounting Style: | Screw |
Product Type: | IGBT Modules |
Factory Pack Quantity: Factory Pack Quantity: | 10 |
Subcategory: | IGBTs |
Technology: | Si |
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