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| TYPE | DESCRIPTION |
| Manufacturer: | Texas Instruments |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | VSONP-8 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Id - Continuous Drain Current: | 100 A |
| Rds On - Drain-Source Resistance: | 15.5 mOhms |
| Vgs - Gate-Source Voltage: | - 10 V, + 10 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.6 V |
| Qg - Gate Charge: | 2.8 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 3 W |
| Channel Mode: | Enhancement |
| Tradename: | NexFET |
| Packaging: | Reel |
| Brand: | Texas Instruments |
| Configuration: | Single |
| Height: | 1 mm |
| Length: | 6 mm |
| Product Type: | MOSFET |
| Series: | CSD17327Q5A |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Width: | 4.9 mm |
| Unit Weight: | 0.002952 oz |
1
2.24
2.24
10
2
20
100
1.56
156
500
1.284
642
1000
1.019
1019
2500
0.944
2360
5000
0.943
4715
