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| TYPE | DESCRIPTION |
| Manufacturer: | Infineon |
| Product Category: | IGBT Modules |
| RoHS: | Details |
| Product: | IGBT Silicon Modules |
| Configuration: | Single |
| Collector- Emitter Voltage VCEO Max: | 6500 V |
| Collector-Emitter Saturation Voltage: | 3 V |
| Continuous Collector Current at 25 C: | 750 A |
| Gate-Emitter Leakage Current: | 400 nA |
| Pd - Power Dissipation: | 3000 kW |
| Package / Case: | Module |
| Minimum Operating Temperature: | - 50 C |
| Maximum Operating Temperature: | + 125 C |
| Packaging: | Tray |
| Brand: | Infineon Technologies |
| Maximum Gate Emitter Voltage: | 20 V |
| Mounting Style: | Chassis Mount |
| Product Type: | IGBT Modules |
| Series: | IGBT3 - E3 |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Part # Aliases: | SP000555604 FZ750R65KE3NOSA1 |
| Unit Weight: | 3.086 lbs |
1
5722.28
5722.28
5
market price
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