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| TYPE | DESCRIPTION |
| Manufacturer: | Infineon |
| Product Category: | IGBT Transistors |
| RoHS: | Details |
| Technology: | Si |
| Package / Case: | TO247-3-32 |
| Mounting Style: | Through Hole |
| Configuration: | Single |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.45 V |
| Maximum Gate Emitter Voltage: | 20 V |
| Continuous Collector Current at 25 C: | 67 A |
| Pd - Power Dissipation: | 136 W |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 175 C |
| Packaging: | Tube |
| Brand: | Infineon Technologies |
| Continuous Collector Current Ic Max: | 30 A |
| Gate-Emitter Leakage Current: | 100 nA |
| Product Type: | IGBT Transistors |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Subcategory: | IGBTs |
| Part # Aliases: | IKWH30N65WR6 SP005430886 |
1
5.94
5.94
10
5.34
53.4
30
5.04
151.2
120
4.26
511.2
270
4.02
1085.4
510
3.52
1795.2
1020
3.5
3570
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