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| TYPE | DESCRIPTION |
| Manufacturer: | Infineon |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | SiC |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-4 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Id - Continuous Drain Current: | 35 A |
| Rds On - Drain-Source Resistance: | 74 mOhms |
| Vgs - Gate-Source Voltage: | - 5 V, + 23 V |
| Vgs th - Gate-Source Threshold Voltage: | 5.7 V |
| Qg - Gate Charge: | 28 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 133 W |
| Channel Mode: | Enhancement |
| Packaging: | Tube |
| Brand: | Infineon Technologies |
| Product Type: | MOSFET |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Subcategory: | MOSFETs |
| Part # Aliases: | IMZA65R057M1H SP005423797 |
1
33.24
33.24
10
30.56
305.6
120
26.38
3165.6
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