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| TYPE | DESCRIPTION |
| Manufacturer: | Infineon |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Id - Continuous Drain Current: | 12 A |
| Rds On - Drain-Source Resistance: | 549 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Qg - Gate Charge: | 15.3 nC |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 51 W |
| Channel Mode: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Brand: | Infineon Technologies |
| Fall Time: | 8 ns |
| Moisture Sensitive: | Yes |
| Product Type: | MOSFET |
| Rise Time: | 12 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Subcategory: | MOSFETs |
| Typical Turn-Off Delay Time: | 48 ns |
| Typical Turn-On Delay Time: | 18 ns |
| Part # Aliases: | IPD60R280PFD7S SP003493724 |
| Unit Weight: | 0.139332 oz |
1
3.62
3.62
10
3.26
32.6
100
2.54
254
500
2.1
1050
1000
1.836
1836
2500
1.835
4587.5
