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| TYPE | DESCRIPTION |
| Manufacturer: | Infineon |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Id - Continuous Drain Current: | 50 A |
| Rds On - Drain-Source Resistance: | 41 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
| Qg - Gate Charge: | 102 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 227 W |
| Channel Mode: | Enhancement |
| Packaging: | Tube |
| Brand: | Infineon Technologies |
| Product Type: | MOSFET |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Subcategory: | MOSFETs |
| Part # Aliases: | IPP65R041CFD7 SP005413358 |
1
23.92
23.92
10
21.56
215.6
100
17.84
1784
250
17.82
4455
500
16.68
8340
1000
16.36
16360
