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| TYPE | DESCRIPTION |
| Manufacturer: | Infineon |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | HSOF-8 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Id - Continuous Drain Current: | 33 A |
| Rds On - Drain-Source Resistance: | 75 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Qg - Gate Charge: | 51 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 188 W |
| Channel Mode: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | Infineon Technologies |
| Product Type: | MOSFET |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Subcategory: | MOSFETs |
| Part # Aliases: | IPT60R075CFD7 SP001962930 |
| Unit Weight: | 0.027197 oz |
1
15.2
15.2
10
13.74
137.4
100
11.38
1138
500
10.66
5330
2000
10.64
21280
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