TYPE | DESCRIPTION |
Manufacturer: | Vishay |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package / Case: | TO-252-3 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Id - Continuous Drain Current: | 7.7 A |
Rds On - Drain-Source Resistance: | 270 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Qg - Gate Charge: | 16 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 42 W |
Channel Mode: | Enhancement |
Packaging: | Tube |
Brand: | Vishay / Siliconix |
Configuration: | Single |
Fall Time: | 17 ns |
Product Type: | MOSFET |
Rise Time: | 27 ns |
Series: | IRFR |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 18 ns |
Typical Turn-On Delay Time: | 6.8 ns |
Part # Aliases: | IRFR120PBF |
Unit Weight: | 0.011640 oz |
1
2.02
2.02
10
1.819
18.19
100
1.419
141.9
500
1.176
588
1000
0.923
923
3000
0.864
2592