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| TYPE | DESCRIPTION |
| Manufacturer: | Infineon |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | TDSON-8 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Id - Continuous Drain Current: | 40 A |
| Rds On - Drain-Source Resistance: | 1.9 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Qg - Gate Charge: | 22 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | - |
| Channel Mode: | Enhancement |
| Tradename: | OptiMOS ~ StrongIRFET |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Brand: | Infineon Technologies |
| Product Type: | MOSFET |
| Series: | N-Channel |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Subcategory: | MOSFETs |
| Part # Aliases: | ISZ019N03L5S SP005408602 |
1
3.18
3.18
10
2.86
28.6
100
2.24
224
500
1.841
920.5
1000
1.618
1618
5000
1.617
8085
