TYPE | DESCRIPTION |
Manufacturer: | IXYS |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Id - Continuous Drain Current: | 36 A |
Rds On - Drain-Source Resistance: | 90 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 5 V |
Qg - Gate Charge: | 29 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 446 W |
Channel Mode: | Enhancement |
Tradename: | HiPerFET |
Packaging: | Tube |
Brand: | IXYS |
Configuration: | Single |
Fall Time: | 4 ns |
Product Type: | MOSFET |
Rise Time: | 8 ns |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 45 ns |
Typical Turn-On Delay Time: | 23 ns |
1
13.98
13.98
10
12.58
125.8
50
11.88
594
100
10.3
1030