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| TYPE | DESCRIPTION |
| Manufacturer: | NXP |
| Product Category: | RF MOSFET Transistors |
| RoHS: | Details |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| Id - Continuous Drain Current: | 100 mA |
| Vds - Drain-Source Breakdown Voltage: | 193 V |
| Operating Frequency: | 1.8 MHz to 512 MHz |
| Gain: | 24.8 dB |
| Output Power: | 35 W |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 150 C |
| Mounting Style: | Screw Mount |
| Package / Case: | NI-360H-2SB |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Brand: | NXP Semiconductors |
| Number of Channels: | 1 Channel |
| Pd - Power Dissipation: | 154 W |
| Product Type: | RF MOSFET Transistors |
| Series: | MRFX035H |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Subcategory: | MOSFETs |
| Type: | RF Power MOSFET |
| Vgs - Gate-Source Voltage: | - 6 V, 10 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.7 V |
| Part # Aliases: | 935376627178 |
| Unit Weight: | 0.200697 oz |
1
149.78
149.78
50
149.78
7489
