TYPE | DESCRIPTION |
Manufacturer: | NXP |
Product Category: | RF MOSFET Transistors |
RoHS: | Details |
Transistor Polarity: | Dual N-Channel |
Technology: | Si |
Id - Continuous Drain Current: | 43 A |
Vds - Drain-Source Breakdown Voltage: | - 500 mV, 179 V |
Operating Frequency: | 1.8 MHz to 400 MHz |
Gain: | 24.4 dB |
Output Power: | 1.8 kW |
Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 150 C |
Mounting Style: | SMD/SMT |
Package / Case: | OM-1230G-4L |
Packaging: | Reel |
Packaging: | Cut Tape |
Brand: | NXP Semiconductors |
Forward Transconductance - Min: | 44.7 S |
Moisture Sensitive: | Yes |
Number of Channels: | 2 Channel |
Pd - Power Dissipation: | 3333 W |
Product Type: | RF MOSFET Transistors |
Series: | MRFX1K80 |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
Subcategory: | MOSFETs |
Type: | RF Power MOSFET |
Vgs - Gate-Source Voltage: | - 6 V, 10 V |
Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
Part # Aliases: | 935362677578 |
Unit Weight: | 0.186296 oz |
1
486.08
486.08
50
486.08
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