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| TYPE | DESCRIPTION |
| Manufacturer: | Microchip |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | SiC |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 700 V |
| Id - Continuous Drain Current: | 140 A |
| Rds On - Drain-Source Resistance: | 19 mOhms |
| Vgs - Gate-Source Voltage: | - 10 V, + 25 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.9 V |
| Qg - Gate Charge: | 215 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 400 W |
| Channel Mode: | Enhancement |
| Packaging: | Tube |
| Brand: | Microchip / Microsemi |
| Configuration: | Single |
| Product Type: | MOSFET |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Subcategory: | MOSFETs |
| Unit Weight: | 0.211644 oz |
1
62.86
62.86
10
62.84
628.4
100
57.74
5774
