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| TYPE | DESCRIPTION |
| Manufacturer: | Qorvo |
| Product Category: | RF JFET Transistors |
| RoHS: | Details |
| Transistor Type: | HEMT |
| Technology: | GaN-on-SiC |
| Operating Frequency: | 30 MHz to 1.215 GHz |
| Gain: | 19 dB |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 28 V |
| Vgs - Gate-Source Breakdown Voltage: | 100 V |
| Id - Continuous Drain Current: | 817 mA |
| Output Power: | 24 W |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 85 C |
| Pd - Power Dissipation: | 28.8 W |
| Mounting Style: | SMD/SMT |
| Package / Case: | QFN-8 |
| Packaging: | Tray |
| Brand: | Qorvo |
| Configuration: | Single |
| Development Kit: | QPD1000PCB401, QPD1000PCB402 |
| Moisture Sensitive: | Yes |
| Operating Temperature Range: | - 40 C to + 85 C |
| Product Type: | RF JFET Transistors |
| Series: | QPD1000 |
| Factory Pack Quantity: Factory Pack Quantity: | 750 |
| Subcategory: | Transistors |
| Vgs th - Gate-Source Threshold Voltage: | - 2.8 V |
| Part # Aliases: | QPD1000TR7 |
| Unit Weight: | 0.258417 oz |
1
221.08
221.08
25
156.3
3907.5
100
108.82
10882
250
95.86
23965
500
market price
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