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| TYPE | DESCRIPTION |
| Manufacturer: | ROHM Semiconductor |
| Product Category: | IGBT Transistors |
| RoHS: | Details |
| Technology: | Si |
| Package / Case: | TO-3PFM |
| Mounting Style: | Through Hole |
| Configuration: | Single |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.6 V |
| Maximum Gate Emitter Voltage: | 30 V |
| Continuous Collector Current at 25 C: | 35 A |
| Pd - Power Dissipation: | 72 W |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 175 C |
| Packaging: | Tube |
| Brand: | ROHM Semiconductor |
| Gate-Emitter Leakage Current: | 200 nA |
| Product Type: | IGBT Transistors |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Subcategory: | IGBTs |
| Part # Aliases: | RGTH00TK65D |
1
13.14
13.14
10
11.84
118.4
30
11.18
335.4
120
9.68
1161.6
510
8.24
4202.4
1020
6.78
6915.6
2520
6.56
16531.2
