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| TYPE | DESCRIPTION |
| Manufacturer: | Vishay |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-323-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Id - Continuous Drain Current: | 250 mA |
| Rds On - Drain-Source Resistance: | 2.5 Ohms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Qg - Gate Charge: | 400 pC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 280 mW |
| Channel Mode: | Enhancement |
| Tradename: | TrenchFET |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Brand: | Vishay / Siliconix |
| Configuration: | Single |
| Fall Time: | 9.6 ns |
| Product Type: | MOSFET |
| Rise Time: | 4.8 ns |
| Series: | SI1 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 12.8 ns |
| Typical Turn-On Delay Time: | 3.8 ns |
| Part # Aliases: | SI1330EDL-T1-E3 |
1
1.1
1.1
10
0.945
9.45
100
0.705
70.5
500
0.559
279.5
1000
0.436
436
3000
0.396
1188
6000
0.363
2178
9000
0.358
3222
