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| TYPE | DESCRIPTION |
| Manufacturer: | Vishay |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-363-6 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 2 Channel |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Id - Continuous Drain Current: | 700 mA |
| Rds On - Drain-Source Resistance: | 385 mOhms |
| Vgs - Gate-Source Voltage: | - 12 V, + 12 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Qg - Gate Charge: | 1.2 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 300 mW |
| Channel Mode: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Brand: | Vishay |
| Fall Time: | 10 ns |
| Product Type: | MOSFET |
| Rise Time: | 16 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 10 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Part # Aliases: | SI1902DL-T1-GE3 SI1902DL-T1-E3 |
1
0.98
0.98
10
0.799
7.99
100
0.603
60.3
500
0.498
249
1000
0.397
397
3000
0.359
1077
6000
0.343
2058
