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| TYPE | DESCRIPTION |
| Manufacturer: | Vishay |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Id - Continuous Drain Current: | 3.9 A |
| Rds On - Drain-Source Resistance: | 31 mOhms |
| Vgs - Gate-Source Voltage: | - 8 V, + 8 V |
| Vgs th - Gate-Source Threshold Voltage: | 850 mV |
| Qg - Gate Charge: | 7.5 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 750 mW |
| Channel Mode: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | Vishay / Siliconix |
| Configuration: | Single |
| Fall Time: | 10 ns |
| Product Type: | MOSFET |
| Rise Time: | 30 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 35 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Part # Aliases: | SI2312BDS-T1-E3 |
| Unit Weight: | 0.000282 oz |
1
1.24
1.24
10
1.077
10.77
100
0.801
80.1
500
0.635
317.5
1000
0.484
484
3000
0.424
1272
