TYPE | DESCRIPTION |
Manufacturer: | Vishay |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | SMD/SMT |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Id - Continuous Drain Current: | 41 A |
Rds On - Drain-Source Resistance: | 68 mOhms |
Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage: | 5 V |
Qg - Gate Charge: | 51 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 250 W |
Channel Mode: | Enhancement |
Brand: | Vishay Semiconductors |
Product Type: | MOSFET |
Series: | EF |
Factory Pack Quantity: Factory Pack Quantity: | 1 |
Subcategory: | MOSFETs |
1
11.62
11.62
10
10.44
104.4
25
10.16
254
100
8.54
854