TYPE | DESCRIPTION |
Manufacturer: | Vishay |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | Through Hole |
Package / Case: | TO-220AB-3 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 500 V |
Id - Continuous Drain Current: | 14.5 A |
Rds On - Drain-Source Resistance: | 243 mOhms |
Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Qg - Gate Charge: | 66 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 156 W |
Channel Mode: | Enhancement |
Packaging: | Tube |
Brand: | Vishay / Siliconix |
Configuration: | Single |
Fall Time: | 18 ns |
Product Type: | MOSFET |
Rise Time: | 24 ns |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 34 ns |
Typical Turn-On Delay Time: | 15 ns |
Part # Aliases: | SIHP15N50E-GE3 |
Unit Weight: | 0.068784 oz |
1
4.66
4.66
10
4.52
45.2
25
4.38
109.5
100
4.04
404
250
3.92
980
500
3.18
1590
1000
2.7
2700
2000
2.62
5240
5000
2.2
11000