TYPE | DESCRIPTION |
Manufacturer: | Vishay |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package / Case: | PowerPAK-SO-8 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Id - Continuous Drain Current: | 60 A |
Rds On - Drain-Source Resistance: | 6.4 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
Qg - Gate Charge: | 72 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 104 W |
Channel Mode: | Enhancement |
Tradename: | TrenchFET, PowerPAK |
Packaging: | Reel |
Packaging: | Cut Tape |
Packaging: | MouseReel |
Brand: | Vishay Semiconductors |
Configuration: | Single |
Fall Time: | 10 ns |
Forward Transconductance - Min: | 56 S |
Product Type: | MOSFET |
Rise Time: | 9 ns |
Series: | SIR |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 36 ns |
Typical Turn-On Delay Time: | 15 ns |
Part # Aliases: | SIR846DP-GE3 |
Unit Weight: | 0.017870 oz |
1
5.2
5.2
10
4.66
46.6
25
4.52
113
100
3.74
374
500
3.08
1540
1000
2.68
2680
3000
2.66
7980