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SISS54DN-T1-GE3

  • SISS54DN-T1-GE3
  • SISS54DN-T1-GE3
SISS54DN-T1-GE3
Transistors
Vishay / Siliconix
MOSFET 30V N-CH
-
PowerPAK-1212-8S
YES
TYPEDESCRIPTION
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: PowerPAK-1212-8S
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 185.6 A
Rds On - Drain-Source Resistance: 1.06 mOhms
Vgs - Gate-Source Voltage: - 12 V, + 16 V
Vgs th - Gate-Source Threshold Voltage: 2.2 V
Qg - Gate Charge: 47.5 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 65.7 W
Channel Mode: Enhancement
Tradename: TrenchFET
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand:Vishay / Siliconix
Configuration:Single
Fall Time:7 ns
Forward Transconductance - Min:117 S
Product Type:MOSFET
Rise Time:7 ns
Factory Pack Quantity: Factory Pack Quantity:3000
Subcategory:MOSFETs
Transistor Type:TrenchFET Gen V Power MOSFET
Typical Turn-Off Delay Time:28 ns
Typical Turn-On Delay Time:12 ns

1

3.28

3.28

10

2.96

29.6

25

2.8

70

100

2.38

238

500

1.957

978.5

1000

1.62

1620

3000

1.576

4728

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