取消
| TYPE | DESCRIPTION |
| Manufacturer: | Toshiba |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | TSOP6F |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Id - Continuous Drain Current: | 6 A |
| Rds On - Drain-Source Resistance: | 36 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Qg - Gate Charge: | 9.3 nC |
| Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 1.5 W |
| Channel Mode: | Enhancement |
| Qualification: | AEC-Q200 |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | Toshiba |
| Configuration: | Single |
| Fall Time: | 6 ns |
| Product Type: | MOSFET |
| Rise Time: | 48 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs |
| Typical Turn-Off Delay Time: | 18 ns |
| Typical Turn-On Delay Time: | 63 ns |
| Part # Aliases: | SSM6K809R,LXHF(B |
1
1.48
1.48
10
1.304
13.04
100
1.001
100.1
500
0.796
398
1000
0.656
656
3000
0.556
1668
6000
0.52
3120
9000
0.501
4509
