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| TYPE | DESCRIPTION |
| Manufacturer: | Toshiba |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | DFN8x8-5 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Id - Continuous Drain Current: | 22 A |
| Rds On - Drain-Source Resistance: | 170 mOhms |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Qg - Gate Charge: | 50 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 180 W |
| Channel Mode: | Enhancement |
| Tradename: | DTMOSIV-H |
| Packaging: | Reel |
| Brand: | Toshiba |
| Configuration: | Single |
| Fall Time: | 4 ns |
| Product Type: | MOSFET |
| Rise Time: | 20 ns |
| Series: | TK22V65X5 |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 80 ns |
| Typical Turn-On Delay Time: | 55 ns |
| Unit Weight: | 0.006173 oz |
1
10.78
10.78
10
9.7
97
25
9.16
229
100
8.06
806
250
8
2000
1000
6.8
6800
2500
6.68
16700
