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| TYPE | DESCRIPTION |
| Manufacturer: | NXP |
| Product Category: | RF MOSFET Transistors |
| RoHS: | Details |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| Id - Continuous Drain Current: | 154 mA |
| Vds - Drain-Source Breakdown Voltage: | - 500 mV, 65 V |
| Operating Frequency: | 728 MH to 2700 MHz |
| Gain: | 20.9 dB |
| Output Power: | 1.26 W |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 150 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | PLD-1.5W |
| Packaging: | Reel |
| Brand: | NXP Semiconductors |
| Moisture Sensitive: | Yes |
| Number of Channels: | 1 Channel |
| Product Type: | RF MOSFET Transistors |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Subcategory: | MOSFETs |
| Type: | RF Power MOSFET |
| Vgs - Gate-Source Voltage: | - 6 V, 10 V |
| Vgs th - Gate-Source Threshold Voltage: | 0.8 V |
| Part # Aliases: | 935347325515 |
| Unit Weight: | 0.009877 oz |
1000
34.38
34380
