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| TYPE | DESCRIPTION |
| Manufacturer: | Wolfspeed |
| Product Category: | RF JFET Transistors |
| RoHS: | Details |
| Transistor Type: | HEMT |
| Technology: | GaN |
| Operating Frequency: | DC to 3 GHz |
| Gain: | 17.5 dB |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Vgs - Gate-Source Breakdown Voltage: | - 10 V, 2 V |
| Id - Continuous Drain Current: | 8.7 A |
| Output Power: | 100 W |
| Maximum Drain Gate Voltage: | - |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 83 W |
| Mounting Style: | Flange Mount |
| Package / Case: | 440206 |
| Application: | General Purpose |
| Brand: | Wolfspeed |
| Forward Transconductance - Min: | - |
| Product Type: | RF JFET Transistors |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Subcategory: | Transistors |
| Vgs th - Gate-Source Threshold Voltage: | - 3 V |
100
527.1
52710
