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| TYPE | DESCRIPTION |
| Manufacturer: | MACOM |
| Product Category: | RF MOSFET Transistors |
| RoHS: | Details |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| Id - Continuous Drain Current: | 13 A |
| Vds - Drain-Source Breakdown Voltage: | 65 V |
| Operating Frequency: | 400 MHz |
| Gain: | 10 dB |
| Output Power: | 100 W |
| Minimum Operating Temperature: | - 65 C |
| Maximum Operating Temperature: | + 150 C |
| Package / Case: | 333-4 |
| Packaging: | Bulk |
| Brand: | MACOM |
| Configuration: | Single |
| Pd - Power Dissipation: | 270 W |
| Product Type: | RF MOSFET Transistors |
| Factory Pack Quantity: Factory Pack Quantity: | 20 |
| Subcategory: | MOSFETs |
| Type: | RF Power MOSFET |
| Vgs - Gate-Source Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Unit Weight: | 0.734807 oz |
