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| TYPE | DESCRIPTION |
| Manufacturer: | Toshiba |
| Product Category: | RF Bipolar Transistors |
| RoHS: | Details |
| Series: | MT3S113 |
| Transistor Type: | Bipolar |
| Technology: | SiGe |
| Transistor Polarity: | NPN |
| Operating Frequency: | 12.5 GHz |
| DC Collector/Base Gain hfe Min: | 200 |
| Collector- Emitter Voltage VCEO Max: | 5.3 V |
| Emitter- Base Voltage VEBO: | 0.6 V |
| Continuous Collector Current: | 100 mA |
| Maximum Operating Temperature: | + 150 C |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-236-3 |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Brand: | Toshiba |
| Maximum DC Collector Current: | 100 mA |
| Pd - Power Dissipation: | 800 mW |
| Product Type: | RF Bipolar Transistors |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Subcategory: | Transistors |
1
1.58
1.58
10
1.4
14
100
1.077
107.7
500
0.844
422
1000
0.68
680
3000
0.617
1851
6000
0.599
3594
9000
0.584
5256
.jpg "MT3S113(TE85L,F)")
