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| TYPE | DESCRIPTION |
| Manufacturer: | Qorvo |
| Product Category: | RF JFET Transistors |
| Shipping Restrictions: | This product may require additional documentation to export from the United States. |
| RoHS: | Details |
| Transistor Type: | HEMT |
| Technology: | GaN-on-SiC |
| Operating Frequency: | 15 GHz |
| Gain: | 19.3 dB |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 32 V |
| Id - Continuous Drain Current: | 3.5 A |
| Output Power: | 47.6 dBm |
| Maximum Drain Gate Voltage: | 100 V |
| Minimum Operating Temperature: | - 65 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 53 W |
| Mounting Style: | SMD/SMT |
| Package / Case: | Die |
| Packaging: | Gel Pack |
| Brand: | Qorvo |
| Configuration: | Single |
| Operating Temperature Range: | - 65 C to + 150 C |
| Product Type: | RF JFET Transistors |
| Series: | TGF2956 |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Subcategory: | Transistors |
| Part # Aliases: | 1112248 1112248 |
50
143.16
7158
100
126.5
12650
