取消
| TYPE | DESCRIPTION |
| Manufacturer: | Transphorm |
| Product Category: | RF JFET Transistors |
| RoHS: | Details |
| Transistor Type: | HEMT |
| Technology: | GaN |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Breakdown Voltage: | - 18 V, + 18 V |
| Id - Continuous Drain Current: | 6.5 A |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 21 W |
| Mounting Style: | SMD/SMT |
| Package / Case: | PQFN-8 |
| Packaging: | Reel |
| Brand: | Transphorm |
| Moisture Sensitive: | Yes |
| Product Type: | RF JFET Transistors |
| Rds On - Drain-Source Resistance: | 492 mOhms |
| Series: | Gen IV |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| Subcategory: | Transistors |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
3000
4.18
12540
