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10BQ040

  • 10BQ040
  • 10BQ040
10BQ040
DIODE
International Rectifier
DIODE SCHOTTKY
-
YES
1 Amp
267
SCHOTTKY RECTIFIER
10BQ040
PD - 2.397A
The 10BQ040 surface-mount Schottky rectifier has been de-
signed for applications requiring very low forward drop and
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging and reverse battery protection.
• Small footprint, surface mountable
• Very low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long-term
reliability
Characteristics 10BQ040 Units
I
F(AV)
Rectangular 1.0 A
waveform
V
RRM
40 V
I
FSM
@ tp = 5µs sine 430 A
V
F
@ 1.0Apk, T
J
= 125°C 0.49 V
T
J
-55 to 150 °C
Major Ratings and Characteristics
Description / Features
SMB
CASE STYLE CASE OUTLINE
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268
10BQ040
Part number 10BQ040
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
Parameters 10BQ Units Conditions
T
J
Max.Junction Temperature Range -55 to 100 °C
T
STG
Max. Storage Temperature Range -55 to 100 °C
R
thJA
Max. Thermal Resistance, Junction 140 °C/W DC operation — See Fig. 4
to Ambient
R
thJL
Max. Thermal Resistance, Junction 36 °C/W DC operation
to Lead
wt Approximate Weight 0.10 g
Case Style SMB Similar to DO-214AA
Parameters 10BQ Units Conditions
V
FM
Max. Forward Voltage Drop 0.53 V @ 1.0A
See Fig. 1 0.70 V @ 2.0A
0.49 V @ 1.0A
0.64 V @ 2.0A
I
RM
Max. Reverse Leakage Current 0.10 mA T
J
= 25°C
See Fig. 2 4.0 mA T
J
= 125°C
C
T
Max. Junction Capacitance 80 pF V
R
= 5V
DC
, (test signal range 100KHz to 1MHz) 25°C
L
S
Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 5,300 V/µs
(Rated V
R
)
Parameters 10BQ Units Conditions
I
F(AV)
Max. Average Forward Current 1.0
A
50% duty cycle @ T
C
= 112°C, rectangular waveform
See Fig. 5
I
FSM
Max. Peak One Cycle Non - Repetitive 430
A
5µs Sine or 3µs Rect. pulse Following any rated load condition
Surge Current — see Fig. 7 45 10ms Sine 0r 6ms Rect. pulse and with rated V
RRM
applied.
E
AS
Non - Repetitive Avalanche Energy 18 mJ T
J
= 25°C, I
AS
= 0.2A, L = 13mH
I
AR
Repetitive Avalanche Current 0.2 A Current decaying linearly to zero in 1µsec
Frequency limited by T
J
max. V
A
= 1.5 X V
R
typical
Voltage Ratings
Absolute Maximum Ratings
T
J
= 25°C
T
J
= 125°C
V
R
= rated V
R
Thermal-Mechanical Specifications
Electrical Specifications
Pulse Width < 300µs, Duty Cycle < 2%
Mounted 1 inch square PCB, thermal probe connected to lead 2mm from package
40
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269
10BQ040
Fig. 4 Max. Thermal Impedance Z
thJL
Characteristics
Fig. 2 Typical Values of Reverse Current Vs. Reverse
Voltage
Fig. 3 Typical Junction CapacitanceVs. Reverse Voltage
Fig. 1 Max. Forward Voltage Drop
Characteristics
10
100
1000
0 10 20 30 40
T = 25°C
J
Reverse Voltage - V (V)
R
0.0001
0.001
0.01
0.1
1
10
0 10 20 30 40
R
100°C
75°C
50°C
25°C
Reverse Voltage - V (V)
125°C
T = 150°C
J
0.1
1
10
0.2 0.4 0.6 0.8 1.0
FM
Forward Voltage Drop - V (V)
T = 125°C
T = 25°C
J
J
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Single Pulse
(Thermal Resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
2
t
1
t
P
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM
thJC C
21
Reverse current - I
R (ma)
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