SCHOTTKY RECTIFIER 2.1 Amp
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
1
Major Ratings and Characteristics
I
F
DC 2.1 A
V
RRM
40 V
I
FSM
@ tp = 5 µs sine 120 A
V
F
@
1.5Apk, T
J
=125°C 0.56 V
T
J
range - 55 to 150 °C
Characteristics Value Units
The 10MQ040NPbF surface mount Schottky rectifier has been
designed for applications requiring low forward drop and very small
foot prints on PC boards. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes, battery
charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free ("PbF" suffix)
Description/ Features
www.irf.com
Case Styles
10MQ040NPbF
SMA
I
F(AV)
= 2.1Amp
V
R
= 40V
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
2 www.irf.com
V
FM
Max. Forward Voltage Drop (1) 0.54 V @ 1A
* See Fig. 1 0.62 V @ 1.5A
0.49 V @ 1A
0.56 V @ 1.5A
I
RM
Max. Reverse Leakage Current (1) 0.5 mA T
J
= 25 °C
* See Fig. 2 26 mA T
J
= 125 °C
V
F(TO)
Threshold Voltage 0.36 V T
J
= T
J
max.
r
t
Forward Slope Resistance 104 mΩ
C
T
Typical Junction Capacitance 38 pF V
R
= 10V
DC
, T
J
= 25°C, test signal = 1Mhz
L
S
Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/µs
(Rated V
R
)
Part number 10MQ040NPbF
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
40
Voltage Ratings
Absolute Maximum Ratings
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
Electrical Specifications
Parameters 10MQ Units Conditions
(1) Pulse Width < 300µs, Duty Cycle < 2%
T
J
Max. Junction Temperature Range (*) - 55 to 150 °C
T
stg
Max. Storage Temperature Range - 55 to 150 °C
R
thJA
Max. Thermal Resistance Junction 80 °C/W DC operation
to Ambient
wt Approximate Weight 0.07(0.002) g (oz.)
Case Style SMA Similar D-64
Device Marking IR1F
Thermal-Mechanical Specifications
Parameters 10MQ Units Conditions
I
F(AV)
Max. Average Forward Current 1.5 A 50% duty cycle @ T
L
= 123 °C, rectangular wave form.
* See Fig. 4 On PC board 9mm
2
island(.013mm thick copper pad area)
I
FSM
Max. Peak One Cycle Non-Repetitive 120 5µs Sine or 3µs Rect. pulse
Surge Current * See Fig. 6 30 10ms Sine or 6ms Rect. pulse
E
AS
Non-Repetitive Avalanche Energy 3.0 mJ T
J
= 25 °C, I
AS
= 1A, L = 6mH
I
AR
Repetitive Avalanche Current 1.0 A
Parameters 10MQ Units Conditions
A
Following any rated
load condition and
with rated V
RRM
applied
< thermal runaway condition for a diode on its own heatsink
(*) dPtot 1
dTj Rth( j-a)
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
3
www.irf.com
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
0.0001
0.001
0.01
0.1
1
10
100
0 5 10 15 20 25 30 35 40
R
R
125°C
100°C
75°C
50°C
25°C
Reverse Current - I (mA)
T = 150°C
J
Reverse Voltage - V (V)
10
100
0 5 10 15 20 25 30 35 40
T = 25°C
J
R
T
Junction Capacitance - C (pF)
Reverse Voltage - V (V)
0.1
1
10
0.2 0.4 0.6 0.8 1 1.2 1.4 1.
Tj = 150˚C
Tj = 125˚C
Tj = 25˚C
Forward Voltage Drop - V
FM
(V)
Instantaneous Forward Curent - I
F
(A)
