Feb.1999
FS10AS-06
OUTLINE DRAWING Dimensions in mm
MP-3
MITSUBISHI Nch POWER MOSFET
FS10AS-06
HIGH-SPEED SWITCHING USE
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
60
±20
10
40
10
10
40
30
–55 ~ +150
–55 ~ +150
0.26
V
GS = 0V
V
DS = 0V
L = 100µH
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
V
A
A
A
A
A
W
°C
°C
g
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Symbol
MAXIMUM RATINGS (Tc = 25°C)
Parameter Conditions Ratings Unit
6.5
2.3
2.3
0.9MAX.
1.0MAX.
2.3
1.0
0.5 ± 0.1
5.5 ± 0.2
10MAX.
2.3MIN. 1.5 ± 0.2
0.5 ± 0.2
0.8
5.0 ± 0.2
A
q GATE
w DRAIN
e SOURCE
r DRAIN
wr
q
qwe
r
e
¡10V DRIVE
¡V
DSS .................................................................................. 60V
¡r
DS (ON) (MAX) ..............................................................78mΩ
¡I
D ......................................................................................... 10A
¡Integrated Fast Recovery Diode (TYP.)
............. 55ns
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10AS-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
0
10
20
30
40
50
0 20050 100 150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C (°C)
POWER DISSIPATION PD (W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS (V)
DRAIN CURRENT ID (A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
210
0
357 2 10
1
357 2 10
2
357 2
10
–1
10
0
10
1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
tw = 10ms
T
C
= 25°C
Single Pulse
100ms
10ms
1ms
DC
0
4
8
12
16
20
0 0.4 0.8 1.2 1.6 2.0
V
GS
= 20V 10V 8V 7V
5V
6V
Tc = 25°C
Pulse Test
P
D
= 30W
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1.0
V
GS
= 20V
5V
6V10V 8V
Tc = 25°C
Pulse Test
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
C
iss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
V
µA
mA
V
mΩ
mV
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
60
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
58
0.29
9.0
600
180
60
18
22
30
17
1.0
—
55
—
±0.1
0.1
4.0
78
0.39
—
—
—
—
—
—
—
—
1.5
4.17
—
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol UnitParameter Test conditions
Limits
Min. Typ. Max.
I
D = 1mA, VGS = 0V
V
GS = ±20V, VDS = 0V
V
DS = 60V, VGS = 0V
I
D = 1mA, VDS = 10V
I
D = 5A, VGS = 10V
I
D = 5A, VGS = 10V
I
D = 5A, VDS = 5V
V
DS = 10V, VGS = 0V, f = 1MHz
V
DD = 30V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
I
S = 5A, VGS = 0V
Channel to case
I
S = 10A, dis/dt = –100A/µs
PERFORMANCE CURVES
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10AS-06
HIGH-SPEED SWITCHING USE
0
8
16
24
32
40
0 4 8 12 16 20
Tc = 25°C
V
DS
= 10V
Pulse Test
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(mΩ)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
10
0
10
1
23457 10
2
23457
10
0
10
1
2
3
4
5
7
10
2
2
3
4
5
7
T
C
= 25°C
V
DS
= 5V
Pulse Test
75°C
125°C
0
20
40
60
80
100
10
0
357 2 10
1
357 2 10
2
357 23
V
GS
= 10V
20V
T
C
= 25°C
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
0 4 8 12 16 20
Tc = 25°C
Pulse Test
10A
5A
I
D
= 15A
10
0
10
1
23457 10
2
23457
10
0
10
1
2
3
4
5
7
10
2
2
3
4
5
7
Tch = 25°C
V
DD
= 30V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
t
d(off)
t
d(on)
t
f
t
r
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
4
2
3
5
7
10
0
357 2 10
1
357 2 10
2
357 32
Tch = 25°C
f = 1MH
Z
V
GS
= 0V
Ciss
Coss
Crss
.jpg "ODLG2.5(I.S)")
