1N6823
(MSASC150W100L)
1N6823R
(MSASC150W100LR)
100 Volts
150 Amps
Features
• Tungsten/Platinum schottky barrier
• Oxide passivated structure for very low leakage currents
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
• Available as standard polarity (strap-to-anode, 1N6823) and reverse
polarity (strap-to-cathode: 1N6823R)
DESCRIPTION SYMBOL MAX. UNIT
Peak Repetitive Reverse Voltage V
RRM
100 Volts
Working Peak Reverse Voltage V
RWM
100 Volts
DC Blocking Voltage V
R
100 Volts
Average Rectified Forward Current, Tc≤ 125°C
I
F(ave)
150 Amps
derating, forward current, Tc≥ 125°C
dI
F
/dT 4
Amps/°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave I
FSM
750 Amps
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz
I
RRM
2 Amp
Junction Temperature Range T
j
-65 to +150
°C
Storage Temperature Range T
stg
-65 to +150
°C
Thermal Resistance, Junction to Case: 1N6823
1N6823R
θ
JC
0.20
0.35
°C/W
Maximum Ratings @ 25°C (unless otherwise specified)
Mechanical Outline
ThinKey™3
Datasheet# MSC1028A
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
LOW LEAKAGE
SCHOTTKY DIODE
Low expansion
coef. metal (W or
Mo), Ni plated
Cu/Invar/Cu,
Ni plated
ceramic
