SCHOTTKY RECTIFIER
19 Amp
19TQ015PbF
Bulletin PD-20840 rev. B 04/06
1www.irf.com
Major Ratings and Characteristics
I
F(AV)
Rectangular 19 A
waveform
V
RRM
15 V
I
FSM
@ tp = 5 μs sine 700 A
V
F
@
19 Apk, T
J
= 75°C 0.32 V
T
J
range - 55 to 125 °C
Characteristics Values Units
Description/ Features
The 19TQ015PbF Schottky rectifier has been optimized for
ultra low forward voltage drop specifically for the OR-ing of
parallel power supplies. The proprietary barrier technology
allows for reliable operation up to 125° C junction tempera-
ture. Typical applications are in parallel switching power
supplies, converters, reverse battery protection, and redun-
dant power subsystems.
125°C T
J
operation (V
R
< 5V)
Optimized for OR-ing applications
Ultra low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resis-
tance
Lead-Free ("PbF" suffix)
I
F(AV)
= 19Amp
V
R
= 15V
Case Styles
TO-220AC
19TQ015PbF
1
3
athode
Cathode
2
19TQ015PbF
2
Bulletin PD-20840 rev. B 04/06
www.irf.com
Part number 19TQ015PbF
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
Voltage Ratings
I
F(AV)
Max. Average Forward Current 19 A 50% duty cycle @ T
C
= 80° C, rectangular wave form
* See Fig. 5
I
FSM
Max. Peak One Cycle Non-Repetitive 700 5μs Sine or 3μs Rect. pulse
Surge Current * See Fig. 7 330 10ms Sine or 6ms Rect. pulse
E
AS
Non-Repetitive Avalanche Energy 6.75 mJ T
J
= 25 °C, I
AS
= 1.50 Amps, L = 6 mH
I
AR
Repetitive Avalanche Current 1.50 A Current decaying linearly to zero in 1 μsec
Frequency limited by T
J
max. V
A
= 3 x V
R
typical
Parameters 19TQ Units Conditions
A
Absolute Maximum Ratings
V
FM
Max. Forward Voltage Drop (1) 0.36 V @ 19A
* See Fig. 1 0.46 V @ 38A
0.32 V @ 19A
0.43 V @ 38A
I
RM
Max. Reverse Leakage Current (1) 10.5 mA T
J
= 25 °C
* See Fig. 2 522 mA T
J
= 100 °C
465 mA T
J
= 100 °C, V
R
= 12V
285 mA T
J
= 100 °C, V
R
= 5V
C
T
Max. Junction Capacitance 2000 pF V
R
= 5V
DC
(test signal range 100Khz to 1Mhz) 25 °C
L
S
Typical Series Inductance 8.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ μs
(Rated V
R
)
T
J
= 25 °C
T
J
= 75 °C
V
R
= rated V
R
Electrical Specifications
Parameters 19TQ Units Conditions
T
J
Max. Junction Temperature Range -55 to 125 °C
T
stg
Max. Storage Temperature Range -55 to 150 °C
R
thJC
Max. Thermal Resistance Junction 1.50 °C/W DC operation * See Fig. 4
to Case
R
thCS
Typical Thermal Resistance, Case to 0.50 °C/W Mounting surface , smooth and greased
Heatsink
wt Approximate Weight 2 (0.07) g (oz.)
T Mounting Torque Min. 6 (5)
Max. 12 (10)
Marking Device 19TQ015
Kg-cm
(Ibf-in)
Thermal-Mechanical Specifications
Parameters 19TQ Units Conditions
(1) Pulse Width < 300μs, Duty Cycle < 2%
Following any rated
load condition and
with rated V
RRM
applied
15
19TQ015PbF
3
Bulletin PD-20840 rev. B 04/06
www.irf.com
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 1 - Maximum Forward Voltage Drop Characteristics
.1
1
10
100
1000
05101
R
R
75°C
50°C
25°C
Reverse Voltage - V (V)
Reverse Current - I (mA)
T = 100°C
J
.1
1
10
100
1000
0.2.4.6.8 11.21.4
FM
F
Instantaneous For ward Current - I (A)
For ward Voltage Drop - V (V)
T = 100°C
T = 75°C
T = 25°C
J
J
J
100
1000
10000
0 5 10 15 20 2 5 30
T = 25°C
J
Reverse Voltage - V (V)
R
T
Junction Capacitance - C (pF)
. 001
.01
.1
1
10
. 00001 . 0001 . 001 . 01 . 1 1 10 100
D = 0. 33
D = 0. 50
D = 0. 25
D = 0. 17
D = 0. 08
1
thJC
t , Rectangular Pulse Durati on (Seconds)
Thermal Impedance - Z (°C/W)
Single Pulse
(Thermal Resistance)
2
t
1
t
P
DM
Not es:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1
JDM
thJC C
2
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