SCHOTTKY RECTIFIER
19 Amp
19TQ015
19TQ015S
Bulletin PD-20266 rev. B 02/01
1www.irf.com
Major Ratings and Characteristics
I
F(AV)
Rectangular 19 A
waveform
V
RRM
15 V
I
FSM
@ tp = 5 µs sine 700 A
V
F
@
19 Apk, T
J
= 75°C 0.32 V
T
J
range - 55 to 125 °C
Characteristics 19TQ015 Units
Description/Features
The 19TQ015 Schottky rectifier has been optimized for ultra
low forward voltage drop specifically for the OR-ing of parallel
power supplies. The proprietary barrier technology allows for
reliable operation up to 125° C junction temperature. Typical
applications are in parallel switching power supplies, convert-
ers, reverse battery protection, and redundant power
subsystems.
125°C T
J
operation (V
R
< 5V)
Optimized for OR-ing applications
Ultra low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Case Styles
19TQ015
TO-220
I
F(AV)
= 19Amp
V
R
= 15V
19TQ015S
D
2
PAK
19TQ015/ 19TQ015S
2
Bulletin PD-20266 rev. B 02/01
www.irf.com
Part number 19TQ015
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
Voltage Ratings
I
F(AV)
Max. Average Forward Current 19 A 50% duty cycle @ T
C
= 80° C, rectangular wave form
* See Fig. 5
I
FSM
Max. Peak One Cycle Non-Repetitive 700 5µs Sine or 3µs Rect. pulse
Surge Current * See Fig. 7 330 10ms Sine or 6ms Rect. pulse
E
AS
Non-Repetitive Avalanche Energy 6.75 mJ T
J
= 25 °C, I
AS
= 1.50 Amps, L = 6 mH
I
AR
Repetitive Avalanche Current 1.50 A Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
max. V
A
= 3 x V
R
typical
Parameters 19TQ Units Conditions
A
Absolute Maximum Ratings
V
FM
Max. Forward Voltage Drop (1) 0.36 V @ 19A
* See Fig. 1 0.46 V @ 38A
0.32 V @ 19A
0.43 V @ 38A
I
RM
Max. Reverse Leakage Current (1) 10.5 mA T
J
= 25 °C
* See Fig. 2 522 mA T
J
= 100 °C
465 mA T
J
= 100 °C, V
R
= 12V
285 mA T
J
= 100 °C, V
R
= 5V
C
T
Max. Junction Capacitance 2000 pF V
R
= 5V
DC
, (test signal range 100Khz to 1Mhz) 25 °C
L
S
Typical Series Inductance 8.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10,000 V/ µs
(Rated V
R
)
T
J
= 25 °C
T
J
= 75 °C
V
R
= rated V
R
Electrical Specifications
Parameters 19TQ Units Conditions
T
J
Max. Junction Temperature Range -55 to 125 °C
T
stg
Max. Storage Temperature Range -55 to 150 °C
R
thJC
Max. Thermal Resistance Junction 1.50 °C/W DC operation * See Fig. 4
to Case
R
thCS
Typical Thermal Resistance, Case to 0.50 °C/W Mounting surface , smooth and greased
Heatsink
wt Approximate Weight 2 (0.07) g (oz.)
T Mounting Torque Min. 6 (5)
Max. 12 (10)
Kg-cm
(Ibf-in)
Thermal-Mechanical Specifications
Parameters 19TQ Units Conditions
(1) Pulse Width < 300µs, Duty Cycle < 2%
Following any rated
load condition and
with rated V
RRM
applied
15
19TQ015/ 19TQ015S
3
Bulletin PD-20266 rev. B 02/01
www.irf.com
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 1 - Maximum Forward Voltage Drop Characteristics
.1
1
10
100
1000
05101
R
R
75°C
50°C
25°C
Reverse Voltage - V (V)
Rever se Current - I (mA)
T = 100°C
J
.1
1
10
100
1000
0.2.4.6.811.21.4
FM
F
Instantaneous Forward Current - I (A)
Forward Voltage Drop - V (V)
T = 100°C
T = 75°C
T = 25°C
J
J
J
100
1000
10000
0 5 10 15 20 25 30
T = 25°C
J
Reverse Voltage - V (V)
R
T
Junction Capacitance - C (pF)
.001
.01
.1
1
10
. 00001 . 0001 . 001 . 01 . 1 1 10 100
D = 0. 33
D = 0. 50
D = 0. 25
D = 0. 17
D = 0. 08
1
thJC
t , Rectangular Pulse Duration (Seconds)
The r mal Impedance - Z (°C/W)
Single Pulse
(Thermal Resistance)
2
t
1
t
P
DM
Not es:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1
JDM
thJC C
2
.jpg "HFKT/12-HST(257)")
